AAWSAP DIRD, Metallic Spintronics, March 2010
DOW-UAP-D129 · page 5 of 27
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UNCLASSIFIED//&OA QFFI&IAL l:t!II!! er•t I Spintronics is a broad research field with (currently) three major subfields: (1) materials research that is attempting to create new materials that are both magnetic and semiconductors, (2) research on novel magnetotransport effects in ferromagnetic metals, and (3) research on techniques that can be used to manipulate individual electron spins. The first subfield is targeting magnetic semiconductors because devices based on such materials would be the easiest to integrate with the present semiconductor device technology and processing capabilities. However, despite extensive research, most semiconductor spintronic devices are still theoretical concepts awaiting experimental demonstrations. This report focuses on spintronics research in metallic systems within the scope of the second and third subfields. The second subfield has experienced an unprecedented period of new discovery over the past 20 years, including the discovery of GMR, and has already spawned major technological change in the information storage industry with the use of GMR sensors and read heads. The third subfield is vital for spintronic devices, as virtually any processing of information in such devices is associated with transport and manipulation of spins. New and efficient methods for manipulating spins that stimulate active research programs in spintronics at a large number of academic institutions and a half-dozen industrial research labs around the world are highly desirable. The prize to be gained is active control and manipulation of spin distributions (magnetic moments) for new and improved functionality in electronic/spintronic devices. The confluence of intense basic science and industry interest in ferromagnetic metal spintronics has not occurred on this scale in physics in a long time. The report is arranged as follows: Section 2 is dedicated to magnetotransport effects in magnetic systems where magnetic configuration can influence the system's transport properties. It discusses GMR in magnetic multilayers and related phenomena, highlights basic physical principles responsible for GMR, and describes technological applications of the effect. Section 3 focuses on the reverse connection between the system's magnetic configuration and its transport properties-the so-called STT effect. The physical origin and potential applications are discussed. Section 4 discusses other new directions in metallic spintronics, with a particular focus on spintronics with antiferromagnetic materials. Section 5 summarizes, with an eye to the future, the development of spintronic technologies and their aerospace applications. UNCLASSIFIED/ /FOR OFFIGIAk Wii SU•k¥ V